Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-07-25

2008-08-05

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S489000, C438S764000, C438S795000

Reexamination Certificate

active

07407873

ABSTRACT:
A method of manufacturing a semiconductor device includes irradiating a region to be crystallized of a non-monocrystalline semiconductor film with laser beam modulated by an optical modulator to have light intensity distribution having a minimum light intensity line or minimum light intensity spot to crystallize the region, and heating the crystallized region by irradiating light from a flash lamp onto the crystallized region.

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patent: 1495847 (2004-05-01), None
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Dharam Pal Gosain, et al., “Formation of (100)-Textured Si Film Using and Excimer Laser on a Glass Substrate”, Jpn. J. Appl. Phys., vol. 42, Part 2, No. 2B, Feb. 15, 2003, pp. L135-L137.
Hiroyuki Kuriyama, et al., “Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor”, Japanese Journal of Applied Physics, vol. 30, No. 12B, Dec. 1991, pp. 3700-3703.
Akira Fukami, et al., “Improvement in Crystalline Quality of Silicon on Fused Silica by Zone Melting Recrystallization”, Journal of Electronic Communications Society, vol. J69-C, No. 9, Sep. 1986, pp. 1089-1095.
Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-films by Excimer-Laser”, Surface Science, vol. 21, No. 5, 2000, pp. 278-287.

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