Method of manufacturing semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE51005

Reexamination Certificate

active

07422933

ABSTRACT:
A manufacturing method of a semiconductor device which can decrease the degradation of an element due to plasma in the LDD formation process is provided. The degradation of an element due to plasma is decreased by forming an element having an LDD structure according to a manufacturing method of a semiconductor device using a hard mask. Covering the substrate by an electrically conductive film allover, the density of electric charge accumulated in a gate electrode in the plasma process such as anisotropic etching can be reduced, and the degradation due, to plasma process can be reduced.

REFERENCES:
patent: 5049514 (1991-09-01), Mori
patent: 5079617 (1992-01-01), Yoneda
patent: 5276347 (1994-01-01), Wei et al.
patent: 5413961 (1995-05-01), Kim
patent: 5432108 (1995-07-01), Lee
patent: 5445987 (1995-08-01), Kuroda et al.
patent: 5459090 (1995-10-01), Yamazaki et al.
patent: 5473184 (1995-12-01), Murai
patent: 5687113 (1997-11-01), Papadas et al.
patent: 5767006 (1998-06-01), Lee
patent: 6180502 (2001-01-01), Liang
patent: 6274887 (2001-08-01), Yamazaki et al.
patent: 6297093 (2001-10-01), Borel et al.
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 6392628 (2002-05-01), Yamazaki et al.
patent: 6495406 (2002-12-01), Honeycutt
patent: 6528854 (2003-03-01), Yoshida et al.
patent: 6559036 (2003-05-01), Ohtani et al.
patent: 6613666 (2003-09-01), Ma
patent: 6692984 (2004-02-01), Yonezawa et al.
patent: 7172931 (2007-02-01), Monoe et al.
patent: 2001/0030322 (2001-10-01), Yamazaki et al.
patent: 2001/0035526 (2001-11-01), Yamazaki et al.
patent: 2001/0041392 (2001-11-01), Suzawa et al.
patent: 2001/0052950 (2001-12-01), Yamazaki et al.
patent: 2001/0055841 (2001-12-01), Yamazaki et al.
patent: 2002/0000551 (2002-01-01), Yamazaki
patent: 2002/0006705 (2002-01-01), Suzawa et al.
patent: 2002/0008797 (2002-01-01), Yamazaki
patent: 2002/0016028 (2002-02-01), Arao et al.
patent: 2002/0024051 (2002-02-01), Yamazaki
patent: 2002/0028544 (2002-03-01), Fujimoto
patent: 2002/0070382 (2002-06-01), Yamazaki et al.
patent: 2002/0102783 (2002-08-01), Fujimoto et al.
patent: 2002/0110941 (2002-08-01), Yamazaki et al.
patent: 2002/0158288 (2002-10-01), Yamazaki et al.
patent: 2002/0182833 (2002-12-01), Yang
patent: 2003/0094614 (2003-05-01), Yamazaki et al.
patent: 2004/0063256 (2004-04-01), Ishikawa
patent: 2005/0247937 (2005-11-01), Yamazaki et al.
patent: 63-275181 (1988-11-01), None
S. Kishino, “Novel fundamental of semiconductor device” Ohmesha LTD, 1995, pp. 201-207.
U.S. Appl. No. 10/670,310, filed Sep. 26, 2003, Akira Ishikawa (English Specification with Drawings and Claims).
S. Ogura et al., “Design and Characteristic of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor”. IEEE Transactions on Electron Devices, vol. ED-27, No. 8, 1980. pp. 1359-1367.
Huang et al., “A Novel Submicron LDD Transistor with Inverse-T Gate Structure”, IEDM, 1986, pp. 742-745, 1986.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3985814

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.