Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-09-09

2008-09-02

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S624000, C438S783000, C438S784000

Reexamination Certificate

active

07419919

ABSTRACT:
A method for manufacturing a semiconductor device, in which a substrate is disposed in a chamber and a fluorine-containing silicon oxide film is formed on the substrate using a plasma CVD process. The fluorine-containing silicon oxide film is formed such that the release of fluorine from this silicon oxide layer is suppressed. According to this semiconductor device manufacturing method, a stable semiconductor device can be provided such that the device includes a fluorine-containing silicon oxide film (FSG film) at which the release of fluorine is suppressed, and thus peeling does not occur.

REFERENCES:
patent: 4410558 (1983-10-01), Izu et al.
patent: 4519339 (1985-05-01), Izu et al.
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 6100466 (2000-08-01), Nishimoto
patent: 6121162 (2000-09-01), Endo
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6217658 (2001-04-01), Orczyk et al.
patent: 6254792 (2001-07-01), Van Buskirk et al.
patent: 6372291 (2002-04-01), Hua et al.
patent: 6413871 (2002-07-01), M'Saad et al.
patent: 6488995 (2002-12-01), Nishimoto et al.
patent: 6511923 (2003-01-01), Wang et al.
patent: 6709610 (2004-03-01), Van Buskirk et al.
patent: 6733830 (2004-05-01), Todd
patent: 6998340 (2006-02-01), Tsutae
patent: 2002/0011463 (2002-01-01), Buskirk et al.
patent: 2003/0216054 (2003-11-01), Tsutae
patent: 2006/0009045 (2006-01-01), Tsutae
patent: 9330926 (1997-12-01), None
patent: 10144683 (1998-05-01), None
patent: 10199873 (1998-07-01), None
patent: 10242142 (1998-09-01), None
patent: 11008235 (1999-01-01), None
patent: 2001267310 (2001-09-01), None

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