Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-01-08

2008-01-08

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

C438S704000, C257SE21220, C257SE21646

Reexamination Certificate

active

11273504

ABSTRACT:
Provided is a method of manufacturing a semiconductor device with enhancements of electrical characteristics. The method includes sequentially forming a lower electrode and an insulating layer on a semiconductor substrate, dry-etching a region of the insulating layer corresponding to a capacitor forming region so that the lower electrode is not exposed, forming an inter-insulating layer by wet-etching the insulating layer so that a region of the lower electrode corresponding to the capacitor forming region is exposed, and sequentially forming a dielectric layer and an upper electrode on the capacitor forming region to fabricate a capacitor.

REFERENCES:
patent: 2002/0127866 (2002-09-01), Kwean et al.
patent: 2005/0287738 (2005-12-01), Cho et al.
patent: 2007/0020944 (2007-01-01), Chae et al.

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