Method of manufacturing semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S618000, C438S620000, C438S637000, C438S430000, C438S361000, C438S099000

Reexamination Certificate

active

11175790

ABSTRACT:
A method of manufacturing a semiconductor device, including the steps of: forming first and second insulation films on a substrate; sequentially forming an organic sacrificing layer and first and second mask layers thereon; forming a wiring groove pattern in the second mask layer; forming a connection hole pattern for forming connection holes in the second and first mask layers and the organic sacrificing layer; forming a wiring groove pattern in the first mask layer and the organic sacrificing layer and forming the connection holes in the second insulation film, by etching conducted by use of the second and first mask layers as an etching mask; and forming the wiring grooves in the second insulation film and forming the connection holes in the second and first insulation films, by use of the first mask layer and the organic sacrificing layer as a mask.

REFERENCES:
patent: 6451683 (2002-09-01), Farrar
patent: 6638871 (2003-10-01), Wang et al.
patent: 6696222 (2004-02-01), Hsue et al.
patent: 6812127 (2004-11-01), Oshima et al.
patent: 6927495 (2005-08-01), Arita et al.
patent: 6946391 (2005-09-01), Tsai et al.
patent: 2004/0121579 (2004-06-01), Huang et al.
patent: 2005/0003653 (2005-01-01), Kanamura

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3877031

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.