Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-02-13

2007-02-13

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S620000, C438S637000, C438S430000, C438S361000, C438S099000

Reexamination Certificate

active

11175790

ABSTRACT:
A method of manufacturing a semiconductor device, including the steps of: forming first and second insulation films on a substrate; sequentially forming an organic sacrificing layer and first and second mask layers thereon; forming a wiring groove pattern in the second mask layer; forming a connection hole pattern for forming connection holes in the second and first mask layers and the organic sacrificing layer; forming a wiring groove pattern in the first mask layer and the organic sacrificing layer and forming the connection holes in the second insulation film, by etching conducted by use of the second and first mask layers as an etching mask; and forming the wiring grooves in the second insulation film and forming the connection holes in the second and first insulation films, by use of the first mask layer and the organic sacrificing layer as a mask.

REFERENCES:
patent: 6451683 (2002-09-01), Farrar
patent: 6638871 (2003-10-01), Wang et al.
patent: 6696222 (2004-02-01), Hsue et al.
patent: 6812127 (2004-11-01), Oshima et al.
patent: 6927495 (2005-08-01), Arita et al.
patent: 6946391 (2005-09-01), Tsai et al.
patent: 2004/0121579 (2004-06-01), Huang et al.
patent: 2005/0003653 (2005-01-01), Kanamura

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