Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-06-19

2007-06-19

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21256

Reexamination Certificate

active

10959501

ABSTRACT:
A method of manufacturing a semiconductor device includes subjecting a semiconductor wafer, which includes a copper layer formed above a semiconductor substrate and covered with an insulating film, to a dry etching using a fluorocarbon gas to partially remove the insulating film, thereby at least partially exposing a surface of the copper layer. The copper layer, the surface of which is at least partially exposed is subjected to a nitrogen plasma treatment. The semiconductor wafer having the nitrogen plasma-treated copper layer is exposed to atmosphere, and then the semiconductor wafer is subjected to a surface treatment.

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Notification of Reasons for Rejection issued by Japanese Patent Office on Jul. 26, 2005, in Japanese patent application No. 2003-349540.

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