Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-08-21
2007-08-21
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S795000, C438S166000, C438S308000, C438S508000
Reexamination Certificate
active
10671539
ABSTRACT:
The present invention is related to a method of manufacturing a semiconductor device. In particular, the method of the present invention is related to uniformly irradiating a semiconductor film with laser light. In order to achieve the present invention, a scanning speed of the laser light is changed depending on a position to be irradiated. Particularly, the scanning speed becomes higher as the position gets closer to a center of the substrate.
REFERENCES:
patent: 4530600 (1985-07-01), Lopez
patent: 4599133 (1986-07-01), Miyao et al.
patent: 5357365 (1994-10-01), Ipposhi et al.
patent: 5754571 (1998-05-01), Endoh et al.
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5861337 (1999-01-01), Zhang et al.
patent: 6136632 (2000-10-01), Higashi
patent: 6455359 (2002-09-01), Yamazaki et al.
patent: 6472295 (2002-10-01), Morris et al.
patent: 6563077 (2003-05-01), Im
patent: 6593215 (2003-07-01), Hiraga et al.
patent: 6639177 (2003-10-01), Ehrmann et al.
patent: 6650480 (2003-11-01), Tanaka
patent: 6717101 (2004-04-01), Morris et al.
patent: 6770546 (2004-08-01), Yamazaki
patent: 6777645 (2004-08-01), Ehrmann et al.
patent: 6809291 (2004-10-01), Neil et al.
patent: 6822977 (2004-11-01), Stamm et al.
patent: 6849825 (2005-02-01), Tanaka
patent: 6916693 (2005-07-01), Ohnuma et al.
patent: 2002/0137311 (2002-09-01), Timans
patent: 2002/0141473 (2002-10-01), Cordingley et al.
patent: 2003/0021307 (2003-01-01), Yamazaki
patent: 2003/0100169 (2003-05-01), Tanaka et al.
patent: 2003/0224587 (2003-12-01), Yamazaki et al.
patent: 2004/0065643 (2004-04-01), Tanaka
patent: 2004/0074881 (2004-04-01), Oishi
patent: 2004/0106237 (2004-06-01), Yamazaki
patent: 2005/0155956 (2005-07-01), Hamada et al.
patent: 08-195357 (1996-07-01), None
patent: WO 099723806 (1997-07-01), None
patent: 10-082965 (1998-03-01), None
patent: 10-313146 (1998-11-01), None
Le Dung A.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3847919