Method of manufacturing semiconductor device

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor

Reexamination Certificate

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Details

C438S795000, C438S166000, C438S308000, C438S508000

Reexamination Certificate

active

10671539

ABSTRACT:
The present invention is related to a method of manufacturing a semiconductor device. In particular, the method of the present invention is related to uniformly irradiating a semiconductor film with laser light. In order to achieve the present invention, a scanning speed of the laser light is changed depending on a position to be irradiated. Particularly, the scanning speed becomes higher as the position gets closer to a center of the substrate.

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