Method of manufacturing semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S695000, C438S697000

Reexamination Certificate

active

10743578

ABSTRACT:
Provided is a method of manufacturing a semiconductor device. According to the present invention, it is possible that an interlayer insulating film is planarized by forming the interlayer insulating film using multiple simultaneous deposition-and-etch processes without carrying out a subsequent planarization process. In addition, smoothness can be variably controlled by adjusting the deposition and etch rate.

REFERENCES:
patent: 6033981 (2000-03-01), Lee et al.
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6265302 (2001-07-01), Lim et al.
patent: 6291367 (2001-09-01), Kelkar
patent: 6365015 (2002-04-01), Shan et al.
patent: 6410446 (2002-06-01), Tsai et al.
patent: 6617259 (2003-09-01), Jung et al.
patent: 6867141 (2005-03-01), Jung et al.
patent: 2003/0008492 (2003-01-01), Jung et al.
patent: 2003/0207553 (2003-11-01), Jung et al.
patent: 2005/0032382 (2005-02-01), Rossman
patent: 2003-0004930 (2003-01-01), None
patent: 2003-0007720 (2003-01-01), None
patent: WO 01/93312 (2001-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3831429

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.