Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-04-10

2007-04-10

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S162000, C438S166000, C438S473000, C438S487000

Reexamination Certificate

active

10914117

ABSTRACT:
An orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is increased, a distortion thereof is suppressed, and a TFT using such a crystalline semiconductor film is provided. At the time of formation of the amorphous semiconductor film (102) or after the formation thereof, a noble gas element, typically, argon is included in the film and crystallization is performed therefor. Thus, an orientation ratio of the semiconductor film (104) can be increased and a distortion present in the semiconductor film (104) after the crystallization is suppressed as compared with that present in the semiconductor film before the crystallization. Then, the noble gas element in the film is removed or reduced by laser light irradiation performed later.

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