Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-04-03
2007-04-03
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S514000, C438S530000, C257SE21324, C257SE21337
Reexamination Certificate
active
10446078
ABSTRACT:
An impurity is ion-implanted with a silicon nitride film formed on a silicon substrate as a mask film to form a source/drain layer of a MOS transistor. Heat treatment for activating the impurity is done as it is without removing the silicon nitride film to thereby produce heat treatment-based stress between the silicon nitride film and the silicon substrate.
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Hirashita Norio
Ikeda Satoshi
Kamata Yutaka
Kurachi Ikuo
Ghyka Alexander
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
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