Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-03-20

2007-03-20

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S756000, C438S757000

Reexamination Certificate

active

11009712

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device. A minute pattern is formed using a hard mask film of a series of a nitride film as an etch mask. Before a hard mask film removal process is performed, the step of performing given etching using an oxide film etchant is added to remove an abnormal oxide film on the nitride film. It is thus possible to effectively remove the hard mask film. Generation of voids in a pattern below the hard mask film can be also effectively prevented using BOE in which the composition ratio of HF and NH4F and an etching temperature are optimized as an oxide film etchant.

REFERENCES:
patent: 4122215 (1978-10-01), Vratny
patent: 4269654 (1981-05-01), Deckert et al.
patent: 4853344 (1989-08-01), Darmawan
patent: 2004/0102005 (2004-05-01), Dong et al.
patent: 2004/0241941 (2004-12-01), Shin
patent: 1020040002196 (2004-01-01), None

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