Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-07-10

2007-07-10

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S700000, C438S701000, C257SE23069

Reexamination Certificate

active

11057413

ABSTRACT:
This invention provides an etching method for preventing deformation of an opening without extremely lowering productivity. This invention has a process for bonding a supporting board on a front surface of a semiconductor substrate to cover a pad electrode formed on the semiconductor substrate with a silicon oxide film interposed therebetween, a process for forming a via hole from a back surface of the semiconductor substrate to a surface of the pad electrode, a process for forming a first opening in the semiconductor substrate to a position where the silicon oxide film is not exposed with using etching gas containing SF6and O2at least, and a process for forming a second opening in the semiconductor substrate to a position where the silicon oxide film is exposed with using etching gas containing C4F8and SF6at least.

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patent: WO-99-40624 (1999-08-01), None

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