Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-24
2006-10-24
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S786000, C438S624000, C438S780000, C438S623000
Reexamination Certificate
active
07125794
ABSTRACT:
A first CVD dielectric layer is deposited on a surface of a semiconductor substrate. Next, low-k layers are deposited in at least two different steps to form one of a via-layer dielectric film and a wiring-layer dielectric film on the first CVD dielectric layer. Immediately after the depositions, thermal treatment is performed. A second CVD dielectric layer is deposited on the low-k layers. A groove is formed in the second CVD dielectric layer and the low-k layers. A metal layer is deposited on that structure, filling the groove. The metal layer is removed from the second CVD dielectric layer by chemical mechanical polishing.
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Kondo Seiichi
Misawa Kaori
Nasuno Takashi
Tokitoh Shunichi
Leydig , Voit & Mayer, Ltd.
Luu Chuong Anh
Renesas Technology Corp.
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