Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-08-15

2006-08-15

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S765000, C438S770000, C438S775000

Reexamination Certificate

active

07091135

ABSTRACT:
There is disclosed a method of manufacturing a semiconductor device, which comprises forming a film containing metal elements and silicon elements on a semiconductor substrate, exposing the semiconductor substrate to an atmosphere containing an oxidant to form a silicon dioxide film at the interface between the semiconductor substrate and the film containing metal elements and silicon elements, and nitriding the film containing metal elements and silicon elements after forming the silicon dioxide film.

REFERENCES:
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6294481 (2001-09-01), Inumiya et al.
patent: 2005/0006674 (2005-01-01), Eguchi et al.
patent: 2000-49349 (2000-02-01), None
S. Inumiya, et al. “Method of Manufacturing Semiconductor Device”, U.S. Appl. No. 10/101,913, filed Mar. 21, 2002.

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