Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-05-09

2006-05-09

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S550000

Reexamination Certificate

active

07041582

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device. A barrier metal layer for blocking a metal material from being diffused into an insulating film is formed by means of an ALD method. At this time, the barrier metal layer is formed to have an amorphous structure and the barrier metal layer at the bottom of a contact hole or a via hole is selectively removed so that the barrier metal layer having good anti-diffusion properties even in a thin thickness is obtained. Therefore, it is possible to prevent resistance from increasing due to the barrier metal layer.

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patent: 6461982 (2002-10-01), DeBoer et al.
patent: 2004/0151845 (2004-08-01), Nguyen et al.
patent: 2005/0170601 (2005-08-01), Yoon et al.
patent: 1999-12246 (1999-02-01), None
patent: 1020030044395 (2003-06-01), None
patent: 1020030051040 (2003-06-01), None

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