Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-11
2006-07-11
Ghyka, Alexander (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C438S257000
Reexamination Certificate
active
07075139
ABSTRACT:
Described is a semiconductor device having a silicon oxide (SiO2) film into which nitrogen atoms, in a range between approximately 2×1020atoms/cm3or more and 2×1021atoms/cm3or less, are introduced, used as an insulator film in the semiconductor device. For example, the device can be a nonvolatile memory device, and the silicon oxide film can be used as an insulator film between, e.g., a floating gate electrode and control gate electrode of the nonvolatile memory device. Stable operations and a retention capability of a nonvolatile memory device are obtained even if the nonvolatile memory device is scaled. Moreover, a programming voltage can be lowered. Also described are methods of fabricating the semiconductor device.
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Katayama Atsuko
Kobayashi Takashi
Antonelli, Terry Stout and Kraus, LLP.
Ghyka Alexander
Hitachi , Ltd.
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