Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-16
2006-05-16
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S692000, C438S694000, C438S695000, C438S696000, C438S697000, C438S700000, C438S593000, C438S675000, C438S674000, C438S637000
Reexamination Certificate
active
07045450
ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming gates on a substrate, forming junction areas on a surface of the substrate, forming a first BPSG layer on a resultant structure of the substrate, performing a first CVD process for the first BPSG layer, forming a second BPSG layer on the first BPSG layer, forming a landing plug contact, depositing a polysilicon layer on a resultant structure of the substrate, and performing a second CMP process for the polysilicon layer, the second BPSG layer and the nitride hard mask. The CMP processes are carried by using acid slurry having a high polishing selectivity with respect to the nitride layer, so a step difference between the cell region and the peripheral region is removed, thereby simplifying the semiconductor manufacturing process and removing a dishing phenomenon.
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Lee Sang Ick
Park Hyung Soon
Shin Jong Han
Baumeister B. William
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Yevsikov Victor V.
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