Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-07-23
1997-04-29
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438 30, 438911, H01L 2186, H01L 21786
Patent
active
056248610
ABSTRACT:
A manufacturing method of a semiconductor device includes the steps of depositing a metallic film (light-shielding film), an insulating film and a semiconductor film in this order on an insulating substrate, and after patterning the insulating film and the semiconductor film in a predetermined shape, oxidizing an exposed region of the metallic film using the insulating film and the semiconductor film as a mask. As a result, the light-shielding film composed of the metallic film is formed so as to cover the semiconductor film to block light from an external portion. The manufacturing method permits a process of forming a resist pattern for use in forming the light-shielding film and a process of etching the light-shielding film to be omitted, thereby reducing the required number of processes. Moreover, as a level difference is not generated around the light-shielding film, a generation of a level difference on the semiconductor film can be prevented. Furthermore, as the light-shielding film can be formed completely overlapped with the semiconductor film, a reduction in a display region of the semiconductor device can be avoided, thereby improving an aperture ratio.
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Sharp Kabushiki Kaisha
Trinh Michael
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