Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-08-09
2005-08-09
Smith, Brad (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S525000, C438S289000, C438S530000
Reexamination Certificate
active
06927151
ABSTRACT:
A method of manufacturing a semiconductor device is disclosed which comprises, forming a first well region by performing an ion implantation process for implanting first ions into a semiconductor substrate, and then forming a second well region in the first well region by performing an ion implantation process for implanting second ions having larger mass than the first ions; and forming a three-part or three-fold well region by performing an annealing process on the result structure wherein the lighter first ions are disposed in the upper and lower well regions and the heavier second ions are disposed in the middle well region. Therefore, it is possible to prevent TED phenomenon generated due to the high-energy heat treatment process to be performed later and to provide the increased activation ratio of ions compared to the conventional source/drain region in which only the ions having large mass are implanted by performing an annealing process after the first well region and the second well region are formed.
REFERENCES:
patent: 6198142 (2001-03-01), Chau et al.
patent: 6297098 (2001-10-01), Lin et al.
patent: 6720631 (2004-04-01), Brigham et al.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Smith Brad
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