Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-02-01

2005-02-01

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

Reexamination Certificate

active

06849484

ABSTRACT:
As an opening exposing a surface of an element-forming region positioned in a region lying between two gate electrodes, a first opening is formed based on a resist pattern formed such that a portion of a region where the opening is formed overlaps two-dimensionally with a portion of one gate electrode. As an opening exposing a surface of one gate electrode, a second opening is formed based on a resist pattern formed such that a region where the opening is formed overlaps two-dimensionally solely with one gate electrode. Here, the first opening is covered with a non-photosensitive, organic film and the resist pattern. Thereafter, a tungsten interconnection is formed in the first and second openings. Thus, a semiconductor device, of which production cost is reduced, and in which electrical short-circuit and falling off of an interconnection are suppressed, can be obtained.

REFERENCES:
patent: 5432105 (1995-07-01), Chien
patent: 08-316308 (1996-11-01), None
patent: 09-51036 (1997-02-01), None
patent: P2001-44294 (2001-02-01), None
patent: P2001-217200 (2001-08-01), None

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