Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-05-19
2000-08-01
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438643, 438637, 438640, 438652, 438666, 438669, H01L 2144
Patent
active
060966319
ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a first film on an entire surface of a substrate having a recessed portion, including a bottom surface and a side wall of the recessed portion, without completely filling the recessed portion, forming a second film on an entire surface of the first film such that the recessed portion, on the bottom surface and the side wall of which the first film is formed, is completely filled, and polishing the first and second films by a chemical-mechanical polishing method such that the substrate is exposed and the first and second films in the recessed portion remain.
REFERENCES:
patent: 5604158 (1997-02-01), Cadien et al.
patent: 5866920 (1999-02-01), Matsumoto et al.
patent: 5874756 (1999-02-01), Ema et al.
patent: 5904558 (1999-05-01), Suzuki
patent: 5904561 (1999-05-01), Tseng
Hayasaka Nobuo
Kohyama Yusuke
Nakamura Kenro
Nakata Rempei
Gurley Lynne
Kabushiki Kaisha Toshiba
Niebling John F.
LandOfFree
Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-663340