Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-01-11

2005-01-11

Lebentritt, Michael S (Department: 2824)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S296000, C438S305000, C438S592000

Reexamination Certificate

active

06841459

ABSTRACT:
A thermal process for activating respective impurities in a polysilicon film to be a gate electrode and a resistance element is performed with the polysilicon film to be the gate electrode and the resistance element being coated with an oxide film, after the respective impurities are implanted into the polysilicon film to be the gate electrode and the resistance element. Here, concentrations of the respective impurities in the polysilicon film to be the gate electrode and the resistance element are adjusted by controlling the thickness of the oxide film. The degree of impurity activation is thereby adjusted.

REFERENCES:
patent: 3615936 (1971-10-01), Batz
patent: 4755478 (1988-07-01), Abernathey et al.
patent: 5215932 (1993-06-01), Manning
patent: 5656556 (1997-08-01), Yang
patent: 5661059 (1997-08-01), Liu et al.
patent: 5747853 (1998-05-01), So et al.
patent: 6013940 (2000-01-01), Harada et al.
patent: 6399458 (2002-06-01), Coolbaugh et al.
patent: 6451679 (2002-09-01), Hu et al.
patent: 6534388 (2003-03-01), Lin et al.
patent: 6596599 (2003-07-01), Guo
patent: 6682992 (2004-01-01), Geiss et al.
patent: 04-99037 (1992-03-01), None
patent: P2001-291862 (2001-10-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3410279