Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-01-04

2005-01-04

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S692000

Reexamination Certificate

active

06838371

ABSTRACT:
At the time of performing a polishing process on a tungsten film and a silicon oxide film, based on the relation between a residual step and pattern density preliminarily obtained while changing polishing parameters, from pattern density of plugs in the polishing step and a predetermined residual step required, polishing parameters are determined so that a residual step does not exceed a predetermined residual step “h”. With the determined polishing parameters, the polishing process is performed on the tungsten film and the silicon oxide film so that the films are planarized, and plugs are formed in contact holes. As a result, a semiconductor device in which a step does not exceeds a predetermined residual step by a polishing process is obtained.

REFERENCES:
patent: 5502008 (1996-03-01), Hayakawa et al.
patent: 5726099 (1998-03-01), Jaso
patent: 6045435 (2000-04-01), Bajaj et al.
patent: 20040053499 (2004-03-01), Liu et al.
patent: P2001-210612 (1998-03-01), None

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