Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-04-19

2005-04-19

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S354000, C438S369000, C257S197000, C257S583000, C257S586000, C257S591000

Reexamination Certificate

active

06881639

ABSTRACT:
The present invention provides a method of manufacturing semiconductor devices, by which InGaAs-base C-top HBTs are manufactured at low cost. Helium ions with a smaller radius are implanted into a p-type InGaAs layer (in external base regions) not covered with a lamination consisting of an undoped InGaAs spacer layer, n-type InP collector layer, n-type InGaAs cap layer, and collector electrode from a direction vertical to the surface of the external base layer or within an angle of 3 degrees off the vertical. In consequence, the p-type InGaAs in the external base regions remains p-type conductive and low resistive and the n-type InAlAs layer in the external emitter regions can be made highly resistive. By this method, InGaAs-base C-top HBTs can be fabricated on a smaller chip at low cost without increase of the number of processes.

REFERENCES:
patent: 5329145 (1994-07-01), Nakagawa
patent: 6147371 (2000-11-01), Tanaka
patent: 20020190273 (2002-12-01), Delage et al.
patent: 20030042503 (2003-03-01), Hartmann

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