Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-07-12
2005-07-12
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S763000, C438S781000
Reexamination Certificate
active
06916749
ABSTRACT:
A multilayer structure which provides for optimization of a configuration of a patterned photoresist is designed. A multilayer structure (20) includes polysilicon (10), a silicon oxide film (11) and an anti-reflective film (12) which are deposited sequentially in the order noted, and a photoresist (13) is provided on the anti-reflective film (12), so that light for exposure is incident on the multilayer structure (20) through the photoresist (13). First, as a step (i), a range of thickness of the silicon oxide film (11) is determined so as to allow an absolute value of a reflection coefficient of the light for exposure at an interface between the anti-reflective film (12) and the photoresist (13) to be equal to or smaller than a first value. Subsequently, as a step (ii), the range of thickness of the silicon oxide film (11) determined in the step (i) is delimited so as to allow an absolute value of a phase of the reflection coefficient to be equal to or larger than a second value.
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Nakae Akihiro
Tsujita Kouichirou
Lebentritt Michael S.
Luk Olivia T.
Renesas Technology Corp.
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