Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-03
2005-05-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S725000, C438S710000, C438S711000, C438S906000
Reexamination Certificate
active
06887788
ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device. The method comprises the steps of: preparing a silicon substrate having a predetermined lower structure including a gate and a bonding area; forming an interlayer dielectric film on the top side of the substrate; forming a photosensitive film pattern, which exposes an area for providing contact, on the interlayer dielectric film; forming a contact hole exposing a bonding area of the substrate by etching the exposed part of the interlayer dielectric film; removing the photosensitive film pattern; performing a dry cleaning on the exposed bonding area of the substrate so that CF based polymer formed in the etching step is removed; and performing a nitrogen-hydrogen plasma processing on the surface of the exposed bonding area of the substrate so that oxygen polymer and remaining CF-based polymer are removed. Therefore, since hydrogen plasma processing is performed after contact etching, ohmic contact characteristics can be secured. In addition, since the hydrogen plasma processing is performed using a conventional photosensitive film strip apparatus, cost required to install and maintain an additional apparatus is not generated.
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Ahn Tae Hang
Cho Jun Hee
Kim Il Wook
Lee Seok Kiu
Park Sung Eon
Estrada Michelle
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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