Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-03-22
2005-03-22
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S535000, C438S550000, C438S798000
Reexamination Certificate
active
06869865
ABSTRACT:
Activation of impurities is achieved without involving creation of a crystal defect or deformation by using phonon absorption. A laser beam (42) having a wavelength in a range of 16 to 17 μm is irradiated onto silicon, to cause phonon absorption. Before an energy supplied from the laser beam (42) diffuses around a portion which is irradiated with the laser beam (42), solid phase epitaxy in the portion finishes. Accordingly, crystallization occurs only in the portion which is irradiated with the laser beam (42), and does not occur in a portion which is not irradiated with the laser beam (42). Hence, heat is not excessively absorbed. Also, local phase change such as melting and solidification is not caused.
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Y. Setsuhara, et al., Extended Abstracts of International Workshop on Junction Technology, pp. 103-106, “Coherent Phonon Excitation As Nonequillibrium Dopant Activation Process For Ultra-Shallow Junction Formation”, 2001.
Eura Takashi
Inoue Yasuo
Ipposhi Takashi
Kohara Masanobu
Maegawa Shigeto
Estrada Michelle
Fourson George
Ion Engineering Research Institute Corporation
Renesas Technology Corp.
Tsubouchi Natsuro
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