Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-06-17
2008-06-17
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S197000, C257SE21625, C257SE21626
Reexamination Certificate
active
07387921
ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, comprising forming a gate electrode on a main surface of a semiconductor substrate via a gate insulating film, laminating sequentially a first insulating film with oxidation resistance and a silicon film on the main surface of the semiconductor substrate on which the gate electrode is formed, eliminating selectively the silicon film except for a side face of the gate electrode, and oxidizing the silicon film to transform it into a first silicon oxide film, eliminating the first insulating film on the main surface of the semiconductor substrate by using the first silicon oxide film as a mask, and then forming a first impurity layer on the main surface of the semiconductor substrate, laminating a sidewall insulating film thicker than the first silicon oxide film on the side face of the gate electrode on which the first silicon oxide film is formed, and forming a second impurity layer which has the same conduction type as that of the first impurity layer and has impurity concentration higher than that of the first impurity layer close to the first impurity layer by using the sidewall insulating film as a mask.
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Notification of Reason for Rejection issued by the Japanese Patent Office on Dec. 14, 2007, for Japanese Patent Application No. 2004-338508, and English-language translation thereof.
Takenaka Keiichi
Yahashi Katsunori
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Geyer Scott B.
Kabushiki Kaisha Toshiba
Nikmanesh Seahvosh J
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