Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-04-15

2008-04-15

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S502000, C438S509000, C438S473000, C438S765000, C438S767000, C257S103000, C257SE21112, C257SE21121

Reexamination Certificate

active

07358162

ABSTRACT:
A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a preheat temperature of 150° C. to 450° C. and keeping the preheat temperature for a first predetermined time, thereby preheating the semiconductor device; and subsequently raising a temperature of the sapphire substrate from the preheat temperature to a thermal reaction temperature of 500° C. or higher and keeping the thermal reaction temperature for a second predetermined time, thereby performing a thermal reaction treatment of the semiconductor device.

REFERENCES:
patent: 6429465 (2002-08-01), Yagi et al.
patent: 6861335 (2005-03-01), Ueda
patent: 6953703 (2005-10-01), Moustakas
patent: 10-070313 (1998-03-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2790049