Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-08
2008-04-08
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21579
Reexamination Certificate
active
07354859
ABSTRACT:
In a dual damascene process to form a fine interconnection structure, a semiconductor manufacturing method includes: forming a first film to be etched on an insulating layer on a semiconductor substrate; forming a first mask film with an opening on the first film; forming a second film to be etched on the first mask film, burying the opening; forming a second mask film on the second film to be etched; forming an interconnection pattern in the second mask film in the upper portion of the opening; forming an interconnection pattern by etching the second film using the second mask film, forming a via pattern by etching the first film to be etched using the first mask film; and forming a via hole and an interconnection trench in the upper portion of the via hole in the insulating layer by selectively etching the insulating layer using the interconnection and via patterns.
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patent: 2003/0119307 (2003-06-01), Bekiaris et al.
patent: 2004/0115565 (2004-06-01), Lassig et al.
patent: 2004/0137711 (2004-07-01), Deguchi
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Dang Trung
NEC Electronics Corporation
Young & Thompson
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