Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-05-20

2008-05-20

Rose, Kiesha (Department: 4176)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S702000, C438S257000, C438S258000, C438S264000, C438S942000

Reexamination Certificate

active

07375018

ABSTRACT:
Etching is performed on an insulating layer23and a conductive layer32with a photoresist41as the mask, to form an opening51in the conductive layer32. After removing the photoresist41, another insulating layer24is formed all over, which is etched back so as to expose a surface of a conductive layer31, to thereby cover the inner wall of the opening51. Then etching is performed on the conductive layer31with the latter insulating layer24as the mask, so as to form another opening52in the conductive layer31. Then still another insulating layer25is formed all over, which is then etched back so as to expose a surface of the conductive layer32, to thereby fill the opening52with the last formed insulating layer25.

REFERENCES:
patent: 6489201 (2002-12-01), Yoon
patent: 2005/0167759 (2005-08-01), Matsui et al.
patent: 2002-280388 (2002-09-01), None

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