Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-04-01

2008-04-01

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S686000

Reexamination Certificate

active

07351652

ABSTRACT:
A method of manufacturing a semiconductor device includes providing a semiconductor substrate on which a plurality of transistors are defined; forming a wiring pattern over the transistors, the wiring pattern contacting at least one transistor; depositing a first oxide film over the wiring pattern; defining a first contact hole on the oxide film, the first contacting hole exposing the wiring pattern; forming a lower metal layer having a first barrier metal layer, a first metal layer and a second barrier metal layer over the oxide film, the lower metal layer filling the first contact hole; forming a contact hole stop conduction layer over the lower metal layer; depositing a second oxide film over the contact hole stop conduction layer; etching a selected portion of the second oxide film to form a hole exposing the contact hole stop conduction layer; etching the exposed contact hole stop layer to define a second contact hole; forming a contact plug within the second contact hole, the contact plug contacting the lower metal layer; and forming an upper metal layer including a third barrier metal layer and a second metal layer, the upper metal layer contacting the contact plug.

REFERENCES:
patent: 6455424 (2002-09-01), McTeer et al.
patent: 6521532 (2003-02-01), Cunningham
patent: 2005/0158946 (2005-07-01), Taylor et al.
patent: 1020000052058 (2000-08-01), None
patent: 1020040074355 (2004-08-01), None

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