Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-08-02

2011-08-02

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S624000, C438S633000, C438S638000, C257SE21579

Reexamination Certificate

active

07989334

ABSTRACT:
In a method of manufacturing a semiconductor device which method is made up of a process of forming a wiring groove using a hard mask, a metal hard mask107is used to form a wiring groove111, allowing the shape of the wiring groove111to be stabilized. Furthermore, a part or all of the metal hard mask107is removed before the formation of TaN and Cu layers in the wiring groove111. This enables a reduction in possible damage, which may increase the dielectric constant of the surface of low-dielectric-constant film, and thus in possible inter-wire leakage current. As a result, a reliable semiconductor device can be provided.

REFERENCES:
patent: 6001733 (1999-12-01), Huang et al.
patent: 6451688 (2002-09-01), Shimpuku
patent: 7524752 (2009-04-01), Tsutsue
patent: 2001/0029105 (2001-10-01), Seta et al.
patent: 2006-294965 (2006-10-01), None

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