Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-06-07

2011-06-07

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S690000, C438S692000, C257SE21214, C257SE21237

Reexamination Certificate

active

07955980

ABSTRACT:
A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

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patent: 2003/0109129 (2003-06-01), Saito et al.
patent: 2006/0141790 (2006-06-01), Kim et al.
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“Volatile Corrosion Inhibitor (VCI)”, Jul. 1; pp. 1-10, plus English language abstract, Three-Bond Technical News, No. 18., 1975.

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