Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-20
1999-03-02
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438651, 438655, 438683, H01L 2128
Patent
active
058770852
ABSTRACT:
In a method of manufacturing a semiconductor device, a silicide layer of a refractory metal is formed in a predetermined region of a semiconductor element formed on a silicon semiconductor substrate. In the first film formation step, a first thin film consisting of the refractory metal is formed on the surfaces of the silicon semiconductor substrate and the semiconductor element. In the first heat treatment step, a heat treatment is performed with respect to the silicon semiconductor substrate, the semiconductor element, and the first thin film to form a silicide layer. In the first removal step, the first thin film is removed by etching. In the second film formation step, a second thin film consisting of a refractory metal of the same kind as that of the first thin film is formed. In the second heat treatment step, another heat treatment is performed to make the second thin film contain as a solid solution an oxide of the refractory metal present at the interface with the second thin film, thereby making a layer consisting of the oxide vanish. In the second removal step, the second thin film is removed by etching.
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NEC Corporation
Quach T. N.
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