Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-08-30

2011-08-30

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S656000, C438S660000, C438S683000, C438S685000, C438S686000

Reexamination Certificate

active

08008194

ABSTRACT:
The semiconductor manufacturing method comprises the step of forming a metal alloy film of an alloy of a metal of Ni or others and a noble metal over a semiconductor substrate containing a region where silicon is partially exposed; the step of selectively reacting the silicon in the region and the metal alloy film by thermal processing to form metal silicide film containing the metal of Ni or others and the noble metal on the region; and the step of removing the metal alloy film remaining unreacted by using a solution containing hydrogen peroxide with a transition metal, which has higher ionization tendency than the metal of Ni or others, dissolved in.

REFERENCES:
patent: 5331072 (1994-07-01), Yokomichi et al.
patent: 5937300 (1999-08-01), Sekine et al.
patent: 5981788 (1999-11-01), Ofori et al.
patent: 6114565 (2000-09-01), Erman et al.
patent: 6323519 (2001-11-01), Gardner et al.
patent: 6329695 (2001-12-01), Duane et al.
patent: 6380053 (2002-04-01), Komatsu
patent: 6825520 (2004-11-01), Shue et al.
patent: 7135386 (2006-11-01), Kataoka et al.
patent: 7452555 (2008-11-01), Childs
patent: 2001/0020723 (2001-09-01), Gardner et al.
patent: 2006/0046143 (2006-03-01), Nakai et al.
patent: 2007/0071999 (2007-03-01), Ito et al.
patent: 2007/0176224 (2007-08-01), Yaegashi
patent: 200091290 (2000-03-01), None
patent: 2004186698 (2004-07-01), None
patent: 2006128497 (2006-05-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2676624