Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-06-28
2011-06-28
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S099000, C257SE51005, C257SE21570
Reexamination Certificate
active
07968382
ABSTRACT:
An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
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Honda Tatsuya
Isa Toshiyuki
Jinbo Yasuhiro
Choi Calvin
Fish & Richardson P.C.
Mulpuri Savitri
Semiconductor Energy Laboratory Co,. Ltd.
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