Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1997-04-14

1999-03-02

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438636, 438740, 438952, H01L 2144

Patent

active

058770810

ABSTRACT:
According to this invention, an etching stopper film constituted by a silicon nitride film is stacked on an insulating film constituted by a silicon oxide film for protecting a wiring to prevent damage to the wiring caused by anisotropic dry etching for forming a contact hole. A resist pattern having the same shape as that of the contact hole is formed by using a reflection prevention film containing nitrogen atoms, the etching stopper film and the reflection prevention film in a contact hole formation region which contain nitrogen atoms and have equal selectivity ratios under a predetermined condition are simultaneously removed by etching, so that a semiconductor device having stable performance and simple manufacturing steps can be obtained.

REFERENCES:
patent: 4892845 (1990-01-01), Bridges
patent: 5169800 (1992-12-01), Kobayashi
patent: 5169801 (1992-12-01), Sayo
patent: 5221634 (1993-06-01), Cho et al.
patent: 5466637 (1995-11-01), Kim
patent: 5534460 (1996-07-01), Tseng et al.
patent: 5536679 (1996-07-01), Park
patent: 5668052 (1997-09-01), Matsumoto et al.

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