Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-01-18

2011-01-18

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S948000, C438S975000, C257SE21025, C257SE21031

Reexamination Certificate

active

07871908

ABSTRACT:
The method of manufacturing a semiconductor device comprising: forming a first hard mask layer and a second hard mask layer on the layer to be etched (S11); a first groove-forming mask pattern forming process for forming a groove-forming mask pattern which has a first pitch, is formed of the second hard mask layer, and is used as an etching mask when forming groove patterns(S12-S14); and a first concave portion-forming mask pattern forming process for etching the first hard mask layer using the second resist pattern as an etching mask, wherein the second resist pattern is formed of the second resist layer having an opening portion that has a fourth pitch and the first organic layer having an opening portion that is connected to an opening portion of the second resist layer and has a smaller size than the opening portion of the second resist layer (S15-S18).

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