Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1997-12-10

2000-01-25

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438592, 438595, H01L 213205

Patent

active

060178094

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of forming a gate insulating film and a first silicon film on a semiconductor substrate, forming on the first silicon film a conductive film selected from the group consisting of a metal film and a metal silicide film, patterning the conductive film and the first silicon film, thereby forming a gate electrode, forming a second silicon film on a surface of the gate electrode, and carrying out a heat treatment at temperatures of 950.degree. C. or above for increasing the radius of curvature of a lower end portion of the gate electrode or increasing the thickness of the gate insulating film under the lower end portion of the gate electrode, and repairing defects in the gate insulating film.

REFERENCES:
patent: 5470771 (1995-11-01), Fujii et al.
patent: 5512502 (1996-04-01), Ootsuka et al.
patent: 5637514 (1997-06-01), Jeng et al.
patent: 5639679 (1997-06-01), Muramatu
patent: 5814543 (1998-09-01), Nishimoto et al.

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