Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1995-04-21

1998-03-31

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430313, 430317, 430318, 430950, 438669, 438694, 438950, G03F 700

Patent

active

057337136

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating light on the photosensitive resin layer, forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light, forming a carbon pattern by etching the carbon layer using the photosensitive pattern as a mask, and forming a light-reflective pattern or a transparent layer pattern by etching the light-reflective layer using the photosensitive resin layer or the carbon pattern as a mask. When the light-reflective layer pattern is formed, the thickness of the carbon layer is set to be less than 100 nm. When the transparent layer pattern is formed, the thickness of the carbon layer is set to be 80 nm or more.

REFERENCES:
patent: 4704342 (1987-11-01), Lehrer
patent: 4820611 (1989-04-01), Arnold
patent: 5240554 (1993-08-01), Hori
IBM Technical Disclosure, "Carbonized Resist as Directly-Patternable Mask Absorber", Mar. 1988, pp. 402-406.
Proceedings 5th Intern. Conf. on Ion and Plasma Assisted Techniques, pp. 319-325, May 13-15, 1985.

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