Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2011-03-15
2011-03-15
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S460000
Reexamination Certificate
active
07906410
ABSTRACT:
In a method in which a semiconductor wafer1having integrated circuits3formed in a plurality of chip regions and test patterns4formed in scribe lines2ais divided by a plasma etching process so as to manufacture individual semiconductor chips, in the semiconductor wafer1, a protection sheet5which constitutes a mask in the plasma etching process is adhered onto a front plane1athereof where the integrated circuits3have been formed; since laser light9ais irradiated along the scribe lines2a, only a predetermined width of the protection sheet5is removed so as to form a mask having a plasma dicing-purpose opening portion5b; and also, the test patterns4are removed by the laser light9ain combination with a front plane layer of the semiconductor wafer1. As a result, the test patterns4can be removed in a higher efficiency and in simple steps, while the general purpose characteristic can be secured.
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International Search Report Dated May 7, 2008.
Arita Kiyoshi
Harikai Atsushi
Jung Michael
Panasonic Corporation
Pearne & Gordon LLP
Richards N Drew
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