Method of manufacturing semiconductor chip using laser light...

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Reexamination Certificate

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C438S460000

Reexamination Certificate

active

07906410

ABSTRACT:
In a method in which a semiconductor wafer1having integrated circuits3formed in a plurality of chip regions and test patterns4formed in scribe lines2ais divided by a plasma etching process so as to manufacture individual semiconductor chips, in the semiconductor wafer1, a protection sheet5which constitutes a mask in the plasma etching process is adhered onto a front plane1athereof where the integrated circuits3have been formed; since laser light9ais irradiated along the scribe lines2a, only a predetermined width of the protection sheet5is removed so as to form a mask having a plasma dicing-purpose opening portion5b; and also, the test patterns4are removed by the laser light9ain combination with a front plane layer of the semiconductor wafer1. As a result, the test patterns4can be removed in a higher efficiency and in simple steps, while the general purpose characteristic can be secured.

REFERENCES:
patent: 6642127 (2003-11-01), Kumar et al.
patent: 7183137 (2007-02-01), Lee et al.
patent: 2006/0009008 (2006-01-01), Kaneuchi et al.
patent: 2006/0205182 (2006-09-01), Soejima
patent: 2001-250800 (2001-09-01), None
patent: 2005-191039 (2005-07-01), None
patent: 2006-075725 (2006-07-01), None
patent: 2006-179768 (2006-07-01), None
patent: 2008-023489 (2008-02-01), None
International Search Report Dated May 7, 2008.

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