Method of manufacturing semiconductor article

Details Method of manufacturing semiconductor article Method of manufacturing semiconductor article

1997-11-12

2000-04-25

Utech, Benjamin

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438409, 438745, 438753, H01L 2176

Patent

active

060543639

ABSTRACT:
A method of manufacturing a semiconductor article comprises steps of preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on the porous silicon layer, bonding the first substrate and a second substrate to produce a multilayer structure with the nonporous semiconductor layer located inside, separating the first and second substrates of the multilayer structure from each other along the porous silicon layer by heating the multilayer structure and removing the porous silicon layer remaining on the separated second substrate.

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