Method of manufacturing semiconductor acceleration sensor

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

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438 53, 438460, 438462, 257254, 257417, 148DIG28, H02L 2100

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active

061241482

ABSTRACT:
A method of manufacturing a semiconductor acceleration sensor comprises forming a strain sensing section on a surface of a semiconductor wafer, fixing the semiconductor wafer to a cooled fixing stage, cutting out a structural body having the strain sensing section from the semiconductor wafer, and connecting a support member to the structural body cut from the semiconductor wafer.

REFERENCES:
patent: 3912563 (1975-10-01), Tomioka et al.
patent: 4605919 (1986-08-01), Wilmer
patent: 5266528 (1993-11-01), Yamada
patent: 5547598 (1996-08-01), Amano et al.
Patent Abstracts of Japan, vol. 008, No. 099 (E-243) May 10, 1984.
Patent Abstracts of Japan, vol. 095, No. 006 Jul. 31, 1995.
Patent Abstracts of Japan, vol. 096, No. 006 Jun. 28, 1996.
Patent Abstracts of Japan, vol. 097, No. 008 Aug. 29, 1997.

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