Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-10-16
2007-10-16
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C438S706000, C205S324000
Reexamination Certificate
active
10819143
ABSTRACT:
A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.
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Jeong Soo-hwan
Kim In-sook
Seo Sun-ae
Yoo In-kyeong
Buchanan & Ingersoll & Rooney PC
Chen Kin-Chan
Samsung Electronics Co,. Ltd.
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