Method of manufacturing self-aligned silicide

Details Method of manufacturing self-aligned silicide Method of manufacturing self-aligned silicide

1998-05-08

2000-11-21

Wilczewski, Mary

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438683, 438664, H01L 2144

Patent

active

061502642

ABSTRACT:
The invention relates to a method for manufacturing of a titanium self-aligned silicide (Salicide). This process includes of forming a metal layer over the surfaces of the semiconductor substrate and the gate electrode. Then, a rapid thermal process is performed with three stages to form the salicide, for example, titanium silicide, at the interface between the titanium and silicon, namely on the surfaces of the gate electrode and source/drain region. The rapid thermal process with three stages includes using the first stage with the first temperature to form the early titanium silicide having the C49 phase. The temperature is raised to a second temperature and the RTA process is performed with nitrogen gases to transform the high resistance phase C49 of the titanium nitride into a low resistance phase C54 in the second stage. Then, the temperature is rapidly raised to a third temperature to transform the C49 phase into the C54 phase completely and to prevent the agglomeration phenomenon.

REFERENCES:
patent: 5187120 (1993-02-01), Wang
patent: 5612253 (1997-03-01), Farahani et al.
patent: 5780361 (1998-07-01), Inoue
patent: 5953633 (1999-09-01), Chen et al.

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