Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-11
2008-09-30
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S304000, C438S589000, C438S596000, C438S618000
Reexamination Certificate
active
07429527
ABSTRACT:
A method of manufacturing self-aligned contact openings is provided. A substrate having a number of device structures is provided and the top of the device structures is higher than the surface of the substrate. A first dielectric layer and a conductive layer are sequentially formed on the surfaces of the substrate and the device structures. Next, a part of the conductive layers on the top and the sidewalls of the device structures is removed and a number of first spacers is formed on the exposed sidewalls of the device structures. The exposed conductive layer and the first dielectric layer are removed by using the first spacer as the mask to expose the substrate. Then, a number of conductive spacers is formed. A number of second spacers is formed on the sidewalls of the conductive spacers.
REFERENCES:
patent: 7098124 (2006-08-01), Huang et al.
Lai Liang-Chuan
Wang Pin-Yao
Yang Jeng-Huang
Chen Jack
Jianq Chyun IP Office
Powerchip Semiconductor Corp.
LandOfFree
Method of manufacturing self-aligned contact openings does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing self-aligned contact openings, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing self-aligned contact openings will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3989444