Method of manufacturing polycrystalline semiconductor thin film

Details Method of manufacturing polycrystalline semiconductor thin film Method of manufacturing polycrystalline semiconductor thin film

1998-08-11

2000-09-12

Smith, Matthew

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438478, 438489, 438487, 438486, 438150, 257 49, 257 51, 257 52, H01L 2904

Patent

active

061177520

ABSTRACT:
There is provided the method of manufacturing a polycrystalline semiconductor thin film, in which an amorphous semiconductor thin film is formed on an insulating substrate, and the amorphous semiconductor thin film is transformed into a polycrystalline semiconductor thin film. In this method, an energy beam is irradiated onto a predetermined region of the amorphous semiconductor thin film via a mask prepared by forming energy beam transmitting regions on a transparent plate as a plurality of patterns, and the region on which the energy beam is irradiated is changed so as to move the predetermined region on the amorphous semiconductor thin film in order.

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K. Egami et al. "Two-step laser recrystallization of silicon stripes in SiO2 grooves . . . " Material Res. Soc. Symp. Proc. vol. 35 1985 p. 696-674.
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