Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-05-30
2006-05-30
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S719000
Reexamination Certificate
active
07052998
ABSTRACT:
The present invention provides a method for manufacturing integrated-type photovoltaic devices wherein light is incident from a side opposite to its substrate. The advantage of the method is easy patterning. A first electrode film, a photoelectric conversion layer, and a second electrode film are laminated on an insulating layer of a substrate without separation to form a laminated film. A deep open groove is formed through the laminated film to the depth of the first electrode film so as to electrically separate the laminated film including the first electrode film. Two shallow open grooves are formed parallel with, but slightly away from the deep open groove, and separate the laminated film upto the second electrode film. The second electrode film having three or more open grooves are used as a mask to remove the photoelectric conversion layer by etching to expose the first electrode film at bottoms of at least one shallow open groove. An insulating member is formed by filling up the deep open groove where the first electrode film is exposed at the bottom of the groove. A conductive member extends over adjacent elements across the deep open groove.
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Chen Kin-Chan
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
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