Method of manufacturing photoreceiver

Details Method of manufacturing photoreceiver Method of manufacturing photoreceiver

2007-09-11

2007-09-11

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S149000, C438S164000, C438S167000, C438S343000, C257SE21047, C257SE21051, C257SE21053, C257SE21064, C257SE21092

Reexamination Certificate

active

11228471

ABSTRACT:
Disclosed is a method of manufacturing a photoreceiver, including sequentially laminating a buffer layer, a channel layer, a barrier layer, and a cap layer on a substrate; forming a mesa for HEMT and MSM PD by removing the buffer layer, the channel layer, the barrier layer, and the cap layer with the exception of a region corresponding to HEMT and MSM PD; forming a source electrode and a drain electrode of HEMT; removing the cap layer from a region corresponding to a gate electrode of HEMT and a Schottky electrode of MSM PD; forming the gate electrode of HEMT and the Schottky electrode of HEMT on the cap layer-removed region; and removing the cap layer, the barrier layer and the channel layer from a region corresponding to an optical waveguide, to expose the optical waveguide.

REFERENCES:
patent: 5489798 (1996-02-01), Doguchi et al.
patent: 5885847 (1999-03-01), Yoon et al.
patent: 6465289 (2002-10-01), Streit et al.
patent: 2005/0023554 (2005-02-01), Chu et al.

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